Anomalous hall effect
N Nagaosa, J Sinova, S Onoda, AH MacDonald… - Reviews of modern …, 2010 - APS
The anomalous Hall effect (AHE) occurs in solids with broken time-reversal symmetry,
typically in a ferromagnetic phase, as a consequence of spin-orbit coupling. Experimental …
typically in a ferromagnetic phase, as a consequence of spin-orbit coupling. Experimental …
Theory of ferromagnetic (III, Mn) V semiconductors
T Jungwirth, J Sinova, J Mašek, J Kučera… - Reviews of Modern …, 2006 - APS
The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
Character of states near the Fermi level in (Ga, Mn) As: Impurity to valence band crossover
We discuss the character of states near the Fermi level in Mn-doped GaAs, as revealed by a
survey of dc transport and optical studies over a wide range of Mn concentrations. A …
survey of dc transport and optical studies over a wide range of Mn concentrations. A …
Optical properties of III-Mn-V ferromagnetic semiconductors
We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …
Magneto-transport and magneto-optical properties of ferromagnetic (III, Mn) V semiconductors: a review
J Sinova, T Jungwirth, J Černe - International Journal of Modern …, 2004 - World Scientific
Rapid developments in material research of metallic ferromagnetic (III, Mn) V
semiconductors over the past few years have brought a much better understanding of these …
semiconductors over the past few years have brought a much better understanding of these …
Systematic study of Mn-doping trends in optical properties of (Ga, Mn) As
T Jungwirth, P Horodyská, N Tesařová, P Němec… - Physical review …, 2010 - APS
We report on a systematic study of optical properties of (Ga, Mn) As epilayers spanning the
wide range of accessible Mn Ga dopings. The material synthesis was optimized for each …
wide range of accessible Mn Ga dopings. The material synthesis was optimized for each …
Systematic study of magnetic linear dichroism and birefringence in (Ga, Mn) As
Magnetic linear dichroism and birefringence in (Ga, Mn) As epitaxial layers is investigated
by measuring the polarization plane rotation of reflected linearly polarized light when …
by measuring the polarization plane rotation of reflected linearly polarized light when …
Electronic structure and carrier dynamics of the ferromagnetic semiconductor
Infrared spectroscopy is used to study the doping and temperature dependence of the
intragap absorption in the ferromagnetic semiconductor Ga 1− x Mn x As, from a …
intragap absorption in the ferromagnetic semiconductor Ga 1− x Mn x As, from a …
Infrared magneto-optical properties of (III, Mn) V ferromagetic semiconductors
We present a theoretical study of the infrared magneto-optical properties of ferromagnetic
(III, Mn) V semiconductors. Our analysis combines the kinetic exchange model for (III, Mn) V …
(III, Mn) V semiconductors. Our analysis combines the kinetic exchange model for (III, Mn) V …