Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Electric‐field‐controlled antiferromagnetic spintronic devices

H Yan, Z Feng, P Qin, X Zhou, H Guo… - Advanced …, 2020 - Wiley Online Library
In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …

Semiconducting Transport in Pb10−XCux(PO4)6O Sintered from Pb2SO5 and Cu3P

L Liu, Z Meng, X Wang, H Chen, Z Duan… - Advanced Functional …, 2023 - Wiley Online Library
The recent claim on the discovery of ambient‐pressure room‐temperature superconductivity
in Cu‐doped lead‐apatite has attracted sensational attention. The intriguing compound has …

[HTML][HTML] Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

G Wehmeyer, T Yabuki, C Monachon, J Wu… - Applied Physics …, 2017 - pubs.aip.org
Interest in new thermal diodes, regulators, and switches has been rapidly growing because
these components have the potential for rich transport phenomena that cannot be achieved …

Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature

ZQ Liu, H Chen, JM Wang, JH Liu, K Wang… - Nature …, 2018 - nature.com
The anomalous Hall effect is allowed by symmetry in some non-collinear antiferromagnets
and is associated with Bloch-band topological features. This topological anomalous Hall …

Emerging Antiferromagnets for Spintronics

H Chen, L Liu, X Zhou, Z Meng, X Wang… - Advanced …, 2024 - Wiley Online Library
Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - nature.com
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …

Roadmap on magnetoelectric materials and devices

X Liang, A Matyushov, P Hayes, V Schell… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …

Antiferromagnetic piezospintronics

Z Liu, Z Feng, H Yan, X Wang, X Zhou… - Advanced Electronic …, 2019 - Wiley Online Library
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium

Y Wang, MM Decker, TNG Meier, X Chen… - Nature …, 2020 - nature.com
FeRh attracts intensive interest in antiferromagnetic (AFM) spintronics due to its first-order
phase transition between the AFM and ferromagnetic (FM) phase, which is unique for …