Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …
research activity driven by its profound physics and enormous potential for application. This …
Electric‐field‐controlled antiferromagnetic spintronic devices
H Yan, Z Feng, P Qin, X Zhou, H Guo… - Advanced …, 2020 - Wiley Online Library
In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …
Semiconducting Transport in Pb10−XCux(PO4)6O Sintered from Pb2SO5 and Cu3P
L Liu, Z Meng, X Wang, H Chen, Z Duan… - Advanced Functional …, 2023 - Wiley Online Library
The recent claim on the discovery of ambient‐pressure room‐temperature superconductivity
in Cu‐doped lead‐apatite has attracted sensational attention. The intriguing compound has …
in Cu‐doped lead‐apatite has attracted sensational attention. The intriguing compound has …
[HTML][HTML] Thermal diodes, regulators, and switches: Physical mechanisms and potential applications
Interest in new thermal diodes, regulators, and switches has been rapidly growing because
these components have the potential for rich transport phenomena that cannot be achieved …
these components have the potential for rich transport phenomena that cannot be achieved …
Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature
The anomalous Hall effect is allowed by symmetry in some non-collinear antiferromagnets
and is associated with Bloch-band topological features. This topological anomalous Hall …
and is associated with Bloch-band topological features. This topological anomalous Hall …
Emerging Antiferromagnets for Spintronics
H Chen, L Liu, X Zhou, Z Meng, X Wang… - Advanced …, 2024 - Wiley Online Library
Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …
A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields
H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - nature.com
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …
switching speeds and robustness against magnetic fields,–. Different device concepts have …
Roadmap on magnetoelectric materials and devices
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …
magnetoelectricity) or generating electric voltage with magnetic fields (direct …
Antiferromagnetic piezospintronics
Z Liu, Z Feng, H Yan, X Wang, X Zhou… - Advanced Electronic …, 2019 - Wiley Online Library
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …
Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium
Y Wang, MM Decker, TNG Meier, X Chen… - Nature …, 2020 - nature.com
FeRh attracts intensive interest in antiferromagnetic (AFM) spintronics due to its first-order
phase transition between the AFM and ferromagnetic (FM) phase, which is unique for …
phase transition between the AFM and ferromagnetic (FM) phase, which is unique for …