N:ZnO/MoS2-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems
With the merits of non-contact, highly efficient, and parallel computing, optoelectronic
synaptic devices combining sensing and memory in a single unit are promising for …
synaptic devices combining sensing and memory in a single unit are promising for …
Comprehensive model for the transformation of zinc nitride metastable layers
A Ropero-Real, N Gordillo, JL Pau… - … Applied Materials & …, 2021 - ACS Publications
In this work, we performed systematic studies on the oxidation of zinc nitride metastable
layers using a climate chamber with controlled temperature and relative humidity. The …
layers using a climate chamber with controlled temperature and relative humidity. The …
Effect of (S, V) codoping on the electronic, optical and photocatalytic properties of β-TaON: A DFT+ U study
MA Lahmer - Computational Condensed Matter, 2022 - Elsevier
Systematic calculations using GGA+ U method have been carried out to investigate the
effect of doping with isolated S and V dopants as well as the (S, V) codoping on the …
effect of doping with isolated S and V dopants as well as the (S, V) codoping on the …
Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V− 1 s− 1
Zinc oxynitride (ZnO x N y) has attracted much attention as an amorphous semiconductor
with high electron mobility. Recent studies reported that ZnO x N y thin films grown by …
with high electron mobility. Recent studies reported that ZnO x N y thin films grown by …
Investigation of carrier transport mechanism in high mobility ZnON thin-film transistors
In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-
film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence …
film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence …
Study on structural, mechanical, electronic properties and Debye temperature of four NbN structures
R Yang, Z Zhao, F Wu, Q Wei, M Xue - Computational and Theoretical …, 2021 - Elsevier
A new structure of NbN (P62m-NbN) is predicted by first-principles density functional theory
calculations. For the new structure and P6m2, Pm3m and P63mmc-NbN, they are stable …
calculations. For the new structure and P6m2, Pm3m and P63mmc-NbN, they are stable …
Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150° C) microwave annealing for flexible electronics
A relatively low-temperature process is required to fabricate amorphous oxide thin film
transistor (TFT) display backplanes for flexible electronics. However, in order to ensure the …
transistor (TFT) display backplanes for flexible electronics. However, in order to ensure the …
Influence of Fast Charging on Accuracy of Mobility in -InHfZnO Thin-Film Transistor
Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing
to their high mobility. However, the mobility of a-IHZO thin-film transistors has not been …
to their high mobility. However, the mobility of a-IHZO thin-film transistors has not been …
Microsecond pulse I–V approach to understanding defects in high mobility bi-layer oxide semiconductor transistor
H Woo, S Jeon - Scientific reports, 2017 - nature.com
The carrier transport and device instability of amorphous oxide semiconductor devices are
influenced by defects that are exponentially distributed in energy, because of amorphous …
influenced by defects that are exponentially distributed in energy, because of amorphous …
Identification of the cubic-to-hexagonal phase transition for the production of stable zinc oxynitride layers
M Gómez-Castaño, JL Pau, A Redondo-Cubero - CrystEngComm, 2018 - pubs.rsc.org
Zinc oxynitride layers are becoming popular as semiconductor materials for thin film
transistors. However, the formation of these ternary phases with a high N content is …
transistors. However, the formation of these ternary phases with a high N content is …