Van der Waals epitaxy of iii‐nitride semiconductors based on 2D materials for flexible applications

J Yu, L Wang, Z Hao, Y Luo, C Sun, J Wang… - Advanced …, 2020 - Wiley Online Library
III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

J Ji, HM Kwak, J Yu, S Park, JH Park, H Kim, S Kim… - Nano …, 2023 - Springer
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in
recent years. Although the technology seemed to be difficult to reproduce by other labs at …

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

J Kim, C Bayram, H Park, CW Cheng… - Nature …, 2014 - nature.com
There are numerous studies on the growth of planar films on sp 2-bonded two-dimensional
(2D) layered materials. However, it has been challenging to grow single-crystalline films on …

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

F Ren, B Liu, Z Chen, Y Yin, J Sun, S Zhang… - Science …, 2021 - science.org
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various
materials for advanced electronics and optoelectronics. Here, a previously unidentified …

Flexible gallium nitride for high‐performance, strainable radio‐frequency devices

NR Glavin, KD Chabak, ER Heller, EA Moore… - Advanced …, 2017 - Wiley Online Library
Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices
for transmission of radio‐frequency (RF) signals over large distances for more efficient …

[HTML][HTML] Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

H Ryu, H Park, JH Kim, F Ren, J Kim, GH Lee… - Applied Physics …, 2022 - pubs.aip.org
Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding
between crystalline substrate and atomic building blocks, has been a key technique in the …

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent …

D Kecik, A Onen, M Konuk, E Gürbüz, F Ersan… - Applied Physics …, 2018 - pubs.aip.org
Potential applications of bulk GaN and AlN crystals have made possible single and
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …

Toward 2D materials for flexible electronics: opportunities and outlook

NR Glavin, C Muratore, M Snure - Oxford Open Materials …, 2021 - academic.oup.com
Two-dimensional nanomaterials exhibit exceptional multifunctional properties including high-
electron mobilities/saturation velocities, high surface to volume ratios, unique layered …

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

F Zheng, X Xiao, J Xie, L Zhou, Y Li, H Dong - 2D Materials, 2022 - iopscience.iop.org
Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

W Song, Q Chen, K Yang, M Liang, X Yi… - Advanced Functional …, 2023 - Wiley Online Library
Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …