Achievement of polarity reversion from Al (Ga)-polar to N-polar for AlGaN film on AlN seeding...

Y Li, X Hu, Y Song, Z Su, H Jia, W Wang, Y Jiang… - Materials Science in …, 2022 - Elsevier

The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium
nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour …

被引用次数：11 相关文章

[PDF] acs.org

Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux

S Li, M Adachi, M Ohtsuka… - Crystal Growth & Design, 2024 - ACS Publications

The solution growth method is an economical and environmentally friendly approach to
producing aluminum nitride (AlN) single crystals. However, the fluxes used in the solution …

被引用次数：2 相关文章

[PDF] ssrn.com

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

S Xu, X Zhang, X Luo, R Fang, J Lyu, MJ Lai… - Materials Science in …, 2023 - Elsevier

The N-polar Si-doped n-type AlGaN epi-layer with an Al composition up to 54% was
successfully grown on vicinal c-plane sapphire substrates by metal-organic chemical vapor …

被引用次数：3 相关文章所有 3 个版本

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

Y Tian, X Zhang, A Fan, Y Shen, S Chen… - Materials Science in …, 2022 - Elsevier

The N-polar AlGaN epi-layers were successfully grown on (0001) c-plane sapphire
substrates by using the reformed metal-organic chemical vapor deposition technology …

被引用次数：4 相关文章

[HTML] mdpi.com

[HTML][HTML] Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

M Pristovsek, I Furuhashi, X Yang, C Zhang, MD Smith - Crystals, 2024 - mdpi.com

We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN
on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet …