Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
[HTML][HTML] Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Characterization and modeling of self-heating in nanometer bulk-CMOS at cryogenic temperatures
PAT Hart, M Babaie, A Vladimirescu… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient
temperature range from 300 K down to 4.2 K. A custom test chip was designed and …
temperature range from 300 K down to 4.2 K. A custom test chip was designed and …
[HTML][HTML] CMOS on-chip thermometry at deep cryogenic temperatures
Accurate on-chip temperature sensing is critical for the optimal performance of modern
complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs), to understand …
complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs), to understand …
[HTML][HTML] Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy
As semiconductor devices based on silicon reach their intrinsic material limits, compound
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …
[HTML][HTML] A critical review on the junction temperature measurement of light emitting diodes
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …
efficient alternative to conventional light sources. Yet, in comparison to other lighting …
[HTML][HTML] Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
As the demand for computing applications capable of processing large datasets increases,
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
High-resolution thermoreflectance imaging investigation of self-heating in AlGaN/GaN HEMTs on Si, SiC, and diamond substrates
A El Helou, P Komarov, MJ Tadjer… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …
power operation but suffer in reliability due to potentially damaging self-heating. In this …
Transient thermal characterization of AlGaN/GaN HEMTs under pulsed biasing
G Pavlidis, D Kendig, ER Heller… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The development of steady-state thermal characterization techniques for AlGaN/GaN high-
electron mobility transistors (HEMTs) has been used to measure the device's peak …
electron mobility transistors (HEMTs) has been used to measure the device's peak …