Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
We investigate the modification of the electronic band structure in wurtzite GaN due to
biaxial strain within the M plane using photoreflectance (PR) spectroscopy. The …
biaxial strain within the M plane using photoreflectance (PR) spectroscopy. The …
Magneto-optical Kerr effect spectroscopy study of : Evidence for an interlayer -like exciton
Magneto-optical Kerr effect spectroscopy has been used to measure the Land e ́ g-factor of
excitons in bulk 2 H-MoS 2. For the ground state A 1 s exciton, the adjacent interlayer ILA …
excitons in bulk 2 H-MoS 2. For the ground state A 1 s exciton, the adjacent interlayer ILA …
Anomalous behavior of the excited state of the exciton in bulk
Results of optical spectroscopy studies on bulk 2 H-WS 2 at energies close to its direct band
gap are presented. Reflectance and absorption measurements at low temperature show …
gap are presented. Reflectance and absorption measurements at low temperature show …
Electroreflectance spectroscopy of few-layer MoS2: Issues related to A1s exciton subspecies, exciton binding energy, and inter-layer exciton
Optical spectra of few-layer transition metal dichalcogenide semiconductors reveal several
transitions whose character and origins continue to be debated. We have studied hBN …
transitions whose character and origins continue to be debated. We have studied hBN …
InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
Contrary to the case of III-nitride based visible light-emitting diodes for which the
inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well …
inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well …
Interlayer and excited-state exciton transitions in bulk
Photoreflectance (PR) spectrum of bulk 2 H-MoS 2 at energies around its direct band gap is
shown to have at least three distinct spectral features over a certain temperature range …
shown to have at least three distinct spectral features over a certain temperature range …
Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1− x/InP quantum well detectors
The effect of charge carrier localization resulting in “S-shaped” temperature dependence of
the photoluminescence peak energy of InAs x P 1− x/InP quantum wells (QWs) is distinctly …
the photoluminescence peak energy of InAs x P 1− x/InP quantum wells (QWs) is distinctly …
[HTML][HTML] Impact of Faddeeva–Voigt broadening on line-shape analysis at critical points of dielectric functions
AS Alomar - AIP Advances, 2022 - pubs.aip.org
Faddeeva–Voigt broadening (FVB) couples the physical characteristics of both Lorentzian
and Gaussian profiles as a combined analytic function shaping the dielectric response …
and Gaussian profiles as a combined analytic function shaping the dielectric response …
Effect of surface morphology on macroscale and microscale optical properties of layered InSe grown by molecular beam epitaxy
This paper reports the results on the microphotoluminescence (µPL) and photoreflectance
(PR) spectroscopy studies of InSe thin film grown by molecular beam epitaxy on GaAs (001) …
(PR) spectroscopy studies of InSe thin film grown by molecular beam epitaxy on GaAs (001) …
Origin of additional spectral features in modulated reflectance spectra of 2-dimensional semiconductor systems
A Mukherjee, S Ghosh - Journal of Applied Physics, 2014 - pubs.aip.org
High resolution photoreflectance (PR) spectroscopy study on a single GaAs/AlGaAs
quantum well representing a two-dimensional (2D) system, shows additional distinct …
quantum well representing a two-dimensional (2D) system, shows additional distinct …