High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …

Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one
aspect, there is provided a method of forming an aluminum nitride film comprising the steps …

X-ray photoelectron spectroscopy has been used to investigate the properties of AlN films
deposited using a low temperature plasma-enhanced atomic layer deposition process …

The authors report on the use of hollow cathode plasma for low-temperature plasma-
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …

Harvesting solar energy to enhance thermoelectric generator efficiency is a highly effective
strategy. However, it is a grand challenge but essential to increase solar-thermal conversion …

Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

Thin films of high entropy alloys (HEAs) are of great interest for surface engineering
applications due to their exceptional properties including superior hardness, resistance to …

Thin Ga 2 O 3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the
precursors through plasma-enhanced atomic layer deposition. The depositions were made …

A plasma enhanced atomic layer deposition (PEALD) process has been used to deposit
crystalline AlN thin films at 250° C using nitrogen 5% hydrogen plasma and …

A challenging approach, but one providing a key solution to material growth, remote epitaxy
(RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a …