Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-
patterned sapphire substrates (NPSS) prepared through a nanosphere lithography …

Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …

The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al) GaN
multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral …

Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection
efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact …

We have fabricated low threading dislocation density (TDD) AlN templates on sapphire
substrates for application to deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) by …

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on
nano-patterned sapphire substrates (NPSS) using metal− organic chemical vapor …

AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small
size, DC driving, no environmental contamination etc., and they are now emerging as the …