Present status and future prospect of widegap semiconductor high-power devices
H Okumura - Japanese journal of applied physics, 2006 - iopscience.iop.org
High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …
which is one of the information network infrastructures in the 21st century, as well as power …
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
Self-heating in AlGaN/GaN device structures was probed using integrated micro-
Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature …
Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature …
Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy
RJT Simms, JW Pomeroy, MJ Uren… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Self-heating in AlGaN/GaN HFETs was investigated using electrical analysis and micro-
Raman thermography. Two typically employed electrical methods were assessed to provide …
Raman thermography. Two typically employed electrical methods were assessed to provide …
Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕ GaN high-electron-mobility transistors on 4in. diameter silicon
S Arulkumaran, T Egawa, S Matsui… - Applied Physics …, 2005 - pubs.aip.org
Enhancement of breakdown voltage (BV) with the increase of AlN buffer layer thickness was
observed in Al Ga N∕ Ga N high-electron-mobility transistors (HEMTs) grown by …
observed in Al Ga N∕ Ga N high-electron-mobility transistors (HEMTs) grown by …
Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers
GJ Riedel, JW Pomeroy, KP Hilton… - IEEE Electron …, 2008 - ieeexplore.ieee.org
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to
the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed …
the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed …
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume, S Anantathanasarn… - Japanese journal of …, 2004 - iopscience.iop.org
An Al 2 O 3 insulated-gate (IG) structure was utilized for controlling the surface potential and
suppressing the gate leakage in Al 0.2 Ga 0.8 N/GaN heterostructure field effect transistors …
suppressing the gate leakage in Al 0.2 Ga 0.8 N/GaN heterostructure field effect transistors …
Транзистор на GaN пока самый" крепкий орешек"
В Данилин, Т Жукова, Ю Кузнецов… - Электроника: наука …, 2005 - elibrary.ru
Транзисторы на нитриде галлия, о создании которых впервые сообщили в начале
1993 года разработчики компании APA Optics во главе с М. Ханом (M. Khan) …
1993 года разработчики компании APA Optics во главе с М. Ханом (M. Khan) …
Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography
Photoluminescence (PL) spectroscopy was used to determine lateral temperature
distributions in AlGaN/GaN based devices. Results are compared to Raman thermography …
distributions in AlGaN/GaN based devices. Results are compared to Raman thermography …
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
M Miyoshi, T Egawa, H Ishikawa - Solid-state electronics, 2006 - Elsevier
Al0. 26Ga0. 74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN
interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire …
interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire …
DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates
M Miyoshi, A Imanishi, T Egawa… - Japanese journal of …, 2005 - iopscience.iop.org
Abstract High-crystal-quality Al 0.26 Ga 0.74 N/AlN/GaN structures with a very high mobility,
such as over 2100 cm 2/(V s) with a two-dimensional-electron gas (2DEG) density of …
such as over 2100 cm 2/(V s) with a two-dimensional-electron gas (2DEG) density of …