Dielectrically modulated single and double gate tunnel FET based biosensors for enhanced sensitivity

J Talukdar, G Rawat, K Mummaneni - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
The paper explores the comparative biosensing analysis of single Gate (SG) and double
Gate (DG) Extended Source Tunnel FET (ESTFET). The dielectric modulation technique has …

A Novel T-shape channel with an inverted-T nano-cavity Label-free detection using Si:HfO2 ferroelectric DGDM-JLTFET as a biosensor---A Simulation Study

RA Kumar, GS Kondavitee, G Wadhwa… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
In this article, we present and simulate a very sensitive label-free biosensor that uses Si:
HfO2 ferroelectric (FE) junction less tunnel field-effect transistor (FE-JL-TFET) …

Reduction of corner effect in ZG-ES-TFET for improved electrical performance and its reliability analysis in the presence of traps

T Ashok, CK Pandey - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
In this paper, various electrical parameters of a Z-shaped gate elevated source TFET (ZG-ES-
TFET) in the presence of interface traps are investigated. The placement of Z-shaped gate …

Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance

T Ashok, CK Pandey - Microelectronics Journal, 2024 - Elsevier
In this paper, a novel Dual-Source Elevated-Channel Dopingless TFET (DSEC-DLTFET) is
proposed to enhance the dc and analog/high-frequency (HF) performance of the device …

Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects

T Ashok, CK Pandey - Physica Scripta, 2024 - iopscience.iop.org
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …

Design and analysis of gate stack silicon-on-insulator nanosheet FET for low power applications

R Yuvaraj, A Karuppannan, AK Panigrahy, R Swain - Silicon, 2023 - Springer
Since the introduction of fast integrated circuits, semiconductor manufacturers have
concentrated their efforts on reducing the size of transistors. Increased working frequencies …

Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique

K Kumar, A Kumar, V Kumar, A Jain, SC Sharma - Silicon, 2023 - Springer
This paper presents a dual dielectric gate-gate overlap hetero-structure junctionless tunnel
field effect transistor (DDG-GOHJLTFET), in which first time, a combined effort of the band …

A dielectric modulated step-channel junction-less TFET (DM-SC-JLTFET) for label-free detection of breast cancer cells: design and sensitivity analysis

J Bitra, G Komanapalli - Sensing and Imaging, 2023 - Springer
This work designs a novel dielectric modulated step channel Junctionless tunnel field effect
(DM-SC-JLTFET) for the label-free detection of breast cancer cells using their dielectric …

Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunnel FET with δp+ SiGe Pocket Layer

J Talukdar, G Rawat, K Singh… - Journal of Electronic …, 2020 - Springer
This paper investigates the trap analysis of a double-gate extended-source tunnel field-
effect transistor (DG-ESTFET) and single-gate extended-source tunnel field-effect transistor …

Performance analysis of drain pocket hetero gate dielectric DG-TFET: Solution for ambipolar conduction and enhanced drive current

P Goyal, J Madan, G Srivastava, R Pandey, RS Gupta - Silicon, 2022 - Springer
In this brief, we explored the impact of drain pocket (DP) along with heterogenous gate
dielectric (HD) on the performance of double gate tunnel field effect transistor (DGTFET). We …