Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple …
Abstract The In P/InGaAs triple quantum well (TQW) structure is of significant interest to
researchers studying new generations of semiconductor optoelectronic devices, as it offers …
researchers studying new generations of semiconductor optoelectronic devices, as it offers …
Influence of hydrostatic pressure and temperature on the optical responses of asymmetric triple quantum wells
The work presents the effects of hydrostatic pressure and temperature on the electronic
spectra as well as on the optical responses of parabolically shaped asymmetric triple …
spectra as well as on the optical responses of parabolically shaped asymmetric triple …
Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system
EB Elkenany, OA Alfrnwani, M Sallah - Scientific Reports, 2023 - nature.com
The electronic, optical, and elastic characteristics of the GaxIn1− xPySbzAs1− y− z alloy
lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on …
lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on …
Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In, Ga) N/GaN coupled double quantum wells
GX Wang, XN Li, XZ Duan - Journal of Physics and Chemistry of Solids, 2023 - Elsevier
Within the effective mass approximation, we studied the light-hole and heavy-hole exciton
states and their optical properties, such as oscillator strength and radiative decay time, in …
states and their optical properties, such as oscillator strength and radiative decay time, in …
Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical …
GaAs/GaAlAs quantum dots can be doped with various impurities to modify their
optoelectronic properties. Common impurities used for doping include: Hydrogenic impurity …
optoelectronic properties. Common impurities used for doping include: Hydrogenic impurity …
Comparison of external electric and magnetic fields effect on binding energy of hydrogenic donor impurity in different shaped quantum wells
M Hu, H Wang, Q Gong, S Wang - The European Physical Journal B, 2018 - Springer
The effects of external electric and magnetic fields on the ground state binding energy of
hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells …
hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells …
Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials
B Ozkapi, AI Mese, E Cicek… - physica status solidi (b), 2022 - Wiley Online Library
The effect of the external electric field on the ground state binding energy and self‐
polarization of a hydrogenic donor impurity in quantum wells (QWs) made of different …
polarization of a hydrogenic donor impurity in quantum wells (QWs) made of different …
Impact of pressure on the resonant energy and resonant frequency for two barriers Ga1− xAlxAs/GaAs nanostructures
EB Elkenany, AM Elabsy - Physica Scripta, 2022 - iopscience.iop.org
We study the effect of hydrostatic pressure on resonant frequency (ν 1) and its associated
lifetime (τ 1), and energy (E 1) for electrons tunneling through GaAs-AlGaAs two-barrier …
lifetime (τ 1), and energy (E 1) for electrons tunneling through GaAs-AlGaAs two-barrier …
Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well
This presented work includes the first in-depth theoretical investigation of the third harmonic
generation (THG) coefficients of the AlGaAs/GaAs three-step quantum well. We explore how …
generation (THG) coefficients of the AlGaAs/GaAs three-step quantum well. We explore how …
Effects of electric field and hydrostatic pressure on the exciton states in strained zinc-blende InxGa1− xN-GaN coupled double quantum wells
XN Li, GX Wang, XZ Duan - Materials Science in Semiconductor …, 2023 - Elsevier
Based on the effective mass approximation, the variational theory study of the exciton
properties in a strained zinc blende GaN/In x Ga 1− x N/GaN/In y Ga 1− y N/GaN coupled …
properties in a strained zinc blende GaN/In x Ga 1− x N/GaN/In y Ga 1− y N/GaN coupled …