Intensive comparative study using X-Ray diffraction for investigating microstructural parameters and crystal defects of the novel nanostructural ZnGa2S4 thin films

AA Akl, IM El Radaf, AS Hassanien - Superlattices and Microstructures, 2020 - Elsevier
This paper is devoted to synthesizing good quality polycrystalline ZnGa 2 S 4 thin films of
different thicknesses using inexpensive pyrolysis technology for the first time. Then study the …

Fabrication and characterization of ZnGa1. 01Te2. 13/g-C3N4 heterojunction with enhanced photocatalytic activity

CC Chen, WJ Liu, J Shaya, YY Lin, FY Liu, CW Chen… - Heliyon, 2023 - cell.com
The extensive consumption of fossil fuels increases CO 2 concentration in the atmosphere,
resulting in serious global warming problems. Meanwhile, the problem of water …

Insights into the optoelectronic and thermoelectric properties of defect chalcopyrites XAl2Se4 (X= Zn, Cd, and Hg): A density functional theory approach

M Benaadad, M Bghour, A Labrag - Physica B: Condensed Matter, 2024 - Elsevier
In the current study, we employed the full-potential linearized augmented plane wave plus
local orbitals (FP-LAPW+ lo) approach within the density functional theory (DFT) to …

Structure, Ionic Conductivity, and Dielectric Properties of Li-Rich Garnet-type Li5+2xLa3Ta2–xSmxO12 (0 ≤ x ≤ 0.55) and Their Chemical Stability

DM Abdel-Basset, S Mulmi, MS El-Bana… - Inorganic …, 2017 - ACS Publications
Lithium garnet oxides are considered as very promising solid electrolyte candidates for all-
solid-state lithium ion batteries (SSLiBs). In this work, we present a cubic garnet-type Li5+ 2 …

X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa2Te4

D Errandonea, RS Kumar, O Gomis… - Journal of Applied …, 2013 - pubs.aip.org
We report on high-pressure x-ray diffraction measurements up to 19.8 GPa in zinc digallium
telluride (ZnGa 2 Te 4) at room temperature. An irreversible structural phase transition takes …

Optoelectronic behavioral study of defect-chalcopyrite semiconductors XGa2Te4 (X= Zn, Cd)

P Kumar, A Soni, KC Bhamu, J Sahariya - Materials Research Bulletin, 2017 - Elsevier
In this work, electronic structure and optical properties investigations for defect-chalcopyrite
semiconductors ZnGa 2 Te 4 and CdGa 2 Te 4 are presented using full potential linearized …

[HTML][HTML] Systemically study of optoelectronic and transport properties of chalcopyrite HgAl2X4 (X= S, Se) compounds for solar cell device applications

HH Hegazy, M Manzoor, MW Iqbal, M Zanib… - Journal of materials …, 2022 - Elsevier
This article investigated the structure, optoelectronic characteristics, and transport properties
of the Hg-based chalcopyrite HgAl 2 X 4 (X= S, Se) using DFT. To calculate the optimized …

Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

SS Fouad, GB Sakr, IS Yahia, DM Abdel-Basset… - Materials Research …, 2014 - Elsevier
Abstract Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-
ZnGa 2 Te 4/n-Si HJD were studied over a wide frequency and temperature. Both the …

Memory switching characteristics in amorphous ZnIn2Se4 thin films

DK Dhruv, A Nowicki, BH Patel… - Surface …, 2015 - journals.sagepub.com
ZnIn2Se4 thin films were deposited by flash evaporation of bulk material onto glass and
pyrographite substrates under vacuum. The surface aspects of films have been studied by …

Response of electrical and dielectric parameters of ZnIn2Te4 thin films to temperature and frequency

AM Shakra, M Fadel, SS Shenouda - Physica B: Condensed Matter, 2020 - Elsevier
ZnIn 2 Te 4 has been synthesized in the bulk form by the melt and gradually cooling method.
Then, thermally evaporated thin films have been prepared with different thicknesses (173 …