Maxnvm: Maximizing dnn storage density and inference efficiency with sparse encoding and error mitigation

L Pentecost, M Donato, B Reagen, U Gupta… - Proceedings of the …, 2019 - dl.acm.org
Deeply embedded applications require low-power, low-cost hardware that fits within
stringent area constraints. Deep learning has many potential uses in these domains, but …

Multi-level control of resistive ram (rram) using a write termination to achieve 4 bits/cell in high resistance state

H Aziza, S Hamdioui, M Fieback, M Taouil, M Moreau… - Electronics, 2021 - mdpi.com
RRAM density enhancement is essential not only to gain market share in the highly
competitive emerging memory sector but also to enable future high-capacity and power …

Impact of program/erase operation on the performances of oxide-based resistive switching memory

G Wang, S Long, Z Yu, M Zhang, Y Li, D Xu… - Nanoscale research …, 2015 - Springer
Further performance improvement is necessary for resistive random access memory
(RRAM) to realize its commercialization. In this work, a novel pulse operation method is …

Density enhancement of RRAMs using a RESET write termination for MLC operation

H Aziza, S Hamdioui, M Fieback… - … , Automation & Test …, 2021 - ieeexplore.ieee.org
Multi-Level Cell (MLC) technology can greatly reduce Resistive RAM (RRAM) die sizes to
achieve a breakthrough in cost structure. In this paper, a novel design scheme is proposed …

Memti: Optimizing on-chip nonvolatile storage for visual multitask inference at the edge

M Donato, L Pentecost, D Brooks, GY Wei - IEEE Micro, 2019 - ieeexplore.ieee.org
The combination of specialized hardware and embedded nonvolatile memories (eNVM)
holds promise for energy-efficient deep neural network (DNN) inference at the edge …

Double-Forming Mechanism of TaOx-Based Resistive Memory Device and Its Synaptic Applications

D Ju, S Kim, S Lee, S Kim - Materials, 2023 - mdpi.com
The bipolar resistive switching properties of Pt/TaOx/InOx/ITO-resistive random-access
memory devices under DC and pulse measurement conditions are explored in this work …

A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates

M Pedro, J Martín-Martínez, R Rodriguez… - Solid-State …, 2019 - Elsevier
In this work, an automatic and flexible measurement setup, which allows a massive electrical
characterization of single RRAM devices with pulsed voltages, is presented. The evaluation …

[HTML][HTML] Oxide-Based Resistive RAM Analog Synaptic Behavior Assessment for Neuromemristive Systems

H Aziza - Memristors-the Fourth Fundamental Circuit Element …, 2023 - intechopen.com
Resistive RAM (RRAM) synaptic plasticity behavior is essential to enable future power-
efficient brain-inspired accelerators. In oxide-based RAM (so-called OxRAM), synaptic …

Experimental analysis of oxide-based ram analog synaptic behavior

H Aziza, J Postel-Pellerin, M Moreau - Electronics, 2022 - mdpi.com
One of the important features of Resistive RAM (RRAM) is its conductance modulation,
which makes it suitable for neuromorphic computing systems. In this paper, the conductance …

A high-precision time-domain RRAM state control approach

AA Bagheri-Soulla, MB Ghaznavi-Ghoushchi - Microelectronics journal, 2018 - Elsevier
RRAM as an analog-like element could be utilized in many interesting applications. Highly
non-linear characteristics and fabrication related variations are the most important obstacles …