Z. Charafi and N. Bouarissa,“The effect of the violation of Vegard's law on the optical bowing
in SiGe alloys'. Phys. Lett. A. vol. 234, pp. 493-497 (1997). H. Kajiyama, SI. Muramatsu, T …

(57) ABSTRACT A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD
reaction chamber includes introducing into the chamber a gaseous precursor comprising …

US7238596B2 - Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and
related Si-Ge-Sn-E and Si-Ge-E analogs - Google Patents US7238596B2 - Method for …

The Raman signature of the local Ge–C mode for substitutional C is identified as a narrow
line (8 cm− 1 full width at half maximum) near 530 cm− 1 in alloy films of Ge 1− y C y (0⩽ y⩽ …

We present a study of the infrared absorption and Raman scattering intensity of the local
carbon mode in Si 1− y C y alloys grown by direct carbon implantation followed by different …

We report a detailed study of the dependence of the vibrational modes in rapid thermal
chemical vapor deposition grown Si 1− x− y Ge x C y samples on substitutional carbon …

Different models are used to describe and parameterize enthalpy and free energy in GeSnSi
alloys over the entire composition range from density‐functional theory calculations and are …

Pseudomorphic c-SiC alloys on Si (111) were grown by exposure to acetylene (C2H2) in
ultra-high-vacuum conditions. The behavior of C incorporation in the lattice for different …

We report on a detailed study of the dependence of the vibrational modes in rapid thermal
chemical vapor deposited Si 1− x− y Ge x C y films on the substitutional carbon …

Amorphous Si1− xCx films, with x ranging from 0.54 to 0.71 and low hydrogen content (less
than 5%) were grown by high-energy hydrocarbon ion beam deposition on silicon wafers …