Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT: MEH-PPV/Al organic devices: Comparison study
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT: MEH-
PPV/Al organic devices have been investigated by current–voltage and capacitance …
PPV/Al organic devices have been investigated by current–voltage and capacitance …
Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors
F Yakuphanoglu - Sensors and Actuators A: Physical, 2008 - Elsevier
Inorganic–organic photodiode was fabricated with blend single layer as well as sandwich
structure, using p-Si and poly (2-methoxy-5-(20-ethylhexyloxy)-1, 4-phenylenevinylene) …
structure, using p-Si and poly (2-methoxy-5-(20-ethylhexyloxy)-1, 4-phenylenevinylene) …
The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts
ME Aydın, A Türüt - Microelectronic Engineering, 2007 - Elsevier
The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …
Photodiodes based on graphene oxide–silicon junctions
Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was
fabricated. The current–voltage characteristics of the diode were investigated under dark …
fabricated. The current–voltage characteristics of the diode were investigated under dark …
Electrical properties and back contact study of CZTS/ZnS heterojunction
In the present work, we have studied the effect of metal back contact nature on the electrical
properties of CZTS/ZnS based heterojunction prepared by spray pyrolysis. Three different …
properties of CZTS/ZnS based heterojunction prepared by spray pyrolysis. Three different …
Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application
The present study reports the presence of capacitive memory and forming-free resistive
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction
R Padma, K Sreenu, VR Reddy - Journal of Alloys and Compounds, 2017 - Elsevier
A thin polyethylene oxide (PEO) is formed on p-type InP substrate as an interlayer for
electronic alteration of the Ti/p-InP metal/semiconductor (MS) junction. The electrical and …
electronic alteration of the Ti/p-InP metal/semiconductor (MS) junction. The electrical and …
UV to NIR tunable photodetector using Bi2Te2Se/n-GaN heterojunction
Abstract This study reports Bi 2 Te 2 Se/n-GaN topological insulator/semiconductor
heterojunction fabrication where, Bi 2 Te 2 Se was thermally evaporated over n-type GaN …
heterojunction fabrication where, Bi 2 Te 2 Se was thermally evaporated over n-type GaN …
The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts
M Çakar, N Yıldırım, H Doğan, A Türüt - Applied surface science, 2007 - Elsevier
The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a
p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si …
p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si …
Ag Nanoparticle-Decorated WO3 Nanowires for Nonvolatile Memory
R Rajkumari, NK Singh - ACS Applied Nano Materials, 2020 - ACS Publications
Ag-decorated WO3 nanowires (NWs) were synthesized by using a glancing angle
deposition technique on a Si (100) substrate. X-ray diffraction analysis revealed that Ag …
deposition technique on a Si (100) substrate. X-ray diffraction analysis revealed that Ag …