Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
[HTML][HTML] Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
Ga2O3 has emerged as a promising material for next-generation power electronics. Beyond
the most stable and studied β phase, metastable α-, ε-, and κ-Ga2O3 have unique …
the most stable and studied β phase, metastable α-, ε-, and κ-Ga2O3 have unique …
Plasma enhanced atomic layer deposition of Ga 2 O 3 thin films
RK Ramachandran, J Dendooven… - Journal of Materials …, 2014 - pubs.rsc.org
Amorphous Ga2O3 thin films have been grown on SiO2/Si substrates by atomic layer
deposition (ALD) using tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) gallium (III)[Ga …
deposition (ALD) using tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) gallium (III)[Ga …
Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
J Tao, HL Lu, Y Gu, HP Ma, X Li, JX Chen, WJ Liu… - Applied Surface …, 2019 - Elsevier
Diethylzinc and H 2 O were used as the precursors for the thermal atomic layer deposition
(TH-ALD) of ZnO deposition while the trimethylgallium and O 2 plasma were used as a …
(TH-ALD) of ZnO deposition while the trimethylgallium and O 2 plasma were used as a …
Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
A Mahmoodinezhad, C Janowitz, F Naumann… - Journal of Vacuum …, 2020 - pubs.aip.org
Gallium oxide (Ga 2 O 3) thin films were deposited by plasma-enhanced atomic layer
deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium …
deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium …
Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
X Li, HL Lu, HP Ma, JG Yang, JX Chen, W Huang… - Current Applied …, 2019 - Elsevier
Thin Ga 2 O 3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the
precursors through plasma-enhanced atomic layer deposition. The depositions were made …
precursors through plasma-enhanced atomic layer deposition. The depositions were made …
Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition
Y An, L Dai, Y Wu, B Wu, Y Zhao, T Liu… - Journal of Advanced …, 2019 - World Scientific
In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-
Ga2O3 (100) and Al2O3 (0001) substrates using pulsed laser deposition (PLD). By …
Ga2O3 (100) and Al2O3 (0001) substrates using pulsed laser deposition (PLD). By …
Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition
Comprehensive structural, electrical and optical studies are performed on a series of gallium
oxide (Ga 2 O 3) ultrathin films grown on sapphire with different growth temperatures (400 …
oxide (Ga 2 O 3) ultrathin films grown on sapphire with different growth temperatures (400 …