Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

Ga2O3 has emerged as a promising material for next-generation power electronics. Beyond
the most stable and studied β phase, metastable α-, ε-, and κ-Ga2O3 have unique …

Amorphous Ga2O3 thin films have been grown on SiO2/Si substrates by atomic layer
deposition (ALD) using tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) gallium (III)[Ga …

Diethylzinc and H 2 O were used as the precursors for the thermal atomic layer deposition
(TH-ALD) of ZnO deposition while the trimethylgallium and O 2 plasma were used as a …

Gallium oxide (Ga 2 O 3) thin films were deposited by plasma-enhanced atomic layer
deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium …

Thin Ga 2 O 3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the
precursors through plasma-enhanced atomic layer deposition. The depositions were made …

In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-
Ga2O3 (100) and Al2O3 (0001) substrates using pulsed laser deposition (PLD). By …

Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …

Comprehensive structural, electrical and optical studies are performed on a series of gallium
oxide (Ga 2 O 3) ultrathin films grown on sapphire with different growth temperatures (400 …