A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
The promise of nanomagnetics and spintronics for future logic and universal memory
This paper is both a review of some recent developments in the utilization of magnetism for
applications to logic and memory and a description of some new innovations in …
applications to logic and memory and a description of some new innovations in …
Cross-point memory array without cell selectors—Device characteristics and data storage pattern dependencies
Cross-point memory architecture offers high device density, yet it suffers from substantial
sneak path leakages, which result in large power dissipation and a small sensing margin …
sneak path leakages, which result in large power dissipation and a small sensing margin …
A comprehensive crossbar array model with solutions for line resistance and nonlinear device characteristics
A Chen - IEEE Transactions on Electron Devices, 2013 - ieeexplore.ieee.org
This paper presents a comprehensive crossbar array model that incorporates line resistance
and nonlinear device characteristics. The model can be solved using matrix algebra and is …
and nonlinear device characteristics. The model can be solved using matrix algebra and is …
Writing to and reading from a nano-scale crossbar memory based on memristors
PO Vontobel, W Robinett, PJ Kuekes… - …, 2009 - iopscience.iop.org
We present a design study for a nano-scale crossbar memory system that uses memristors
with symmetrical but highly nonlinear current–voltage characteristics as memory elements …
with symmetrical but highly nonlinear current–voltage characteristics as memory elements …
A survey of memristive threshold logic circuits
AK Maan, DA Jayadevi… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
In this paper, we review different memristive threshold logic (MTL) circuits that are inspired
from the synaptic action of the flow of neurotransmitters in the biological brain. The brainlike …
from the synaptic action of the flow of neurotransmitters in the biological brain. The brainlike …
RRAM crossbar array with cell selection device: A device and circuit interaction study
The resistive random access memory (RRAM) crossbar array has been extensively studied
as one of the most promising candidates for future high-density nonvolatile memory …
as one of the most promising candidates for future high-density nonvolatile memory …
Molecular electronics: From devices and interconnect to circuits and architecture
As the dominating CMOS technology is fast approaching a" brick wall," new opportunities
arise for competing solutions. Nanoelectronics has achieved several breakthroughs lately …
arise for competing solutions. Nanoelectronics has achieved several breakthroughs lately …
Sneak-path testing of crossbar-based nonvolatile random access memories
Emerging nonvolatile memory (NVM) technologies, such as resistive random access
memories (RRAM) and phase-change memories (PCM), are an attractive option for future …
memories (RRAM) and phase-change memories (PCM), are an attractive option for future …
CMOS/nano co-design for crossbar-based molecular electronic systems
MM Ziegler, MR Stan - IEEE Transactions on Nanotechnology, 2003 - ieeexplore.ieee.org
Future electronic systems will need to adopt novel nanoelectronic solutions to keep pace
with Moore's Law. Crossbar-based molecular electronics are among the most promising of …
with Moore's Law. Crossbar-based molecular electronics are among the most promising of …