Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent
material properties. WBG devices are commercially available in discrete and module …

This article addresses the influence of parameters spread on transient current distribution
among parallel-connected silicon carbide (SiC) mosfets and proposes a chips classification …

Parallel connection of silicon carbide metal-oxide-semiconductor transistors are widely used
in large-current-capacity applications or power modules. However, current imbalance …

Device parameter mismatch generates current imbalance between parallel devices. In
severe cases, the device that withstands excessive current may incur overcurrent failure …

This paper systematically investigates the influence of device parameters spread on the
current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient …

This paper studies the spread of key electrical parameters of Silicon Carbide (SiC) MOSFET
devices and its effect on the short-circuit (SC) behaviors. Device screening strategies are …

Parallel operation of silicon carbide (SiC) metal oxide semiconductor field effect transistors
MOSFET s is necessary for high power applications. However, the dynamic current sharing …

The multichip power module is a popular application for large-capacity and high-frequency
converters. However, the existence of an asymmetric circuit layout has a significant influence …

Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in
power electronics applications of medium-and high-power density. Usually, SiC MOSFETs …

Overcurrent failure caused by imbalanced current distribution is one of the universal failure
forms of the SiC MOSFET module. The current sharing of parallel SiC MOSFETs is an …