ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

S Karpov - Optical and Quantum Electronics, 2015 - Springer
The paper reviews applications of ABC-model to interpret internal quantum efficiency and its
droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and …

Green gap in GaN-based light-emitting diodes: in perspective

M Usman, M Munsif, U Mushtaq, AR Anwar… - Critical Reviews in …, 2021 - Taylor & Francis
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

F Olivier, A Daami, C Licitra, F Templier - Applied Physics Letters, 2017 - pubs.aip.org
GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display
applications. In these arrays, each μLED works as a single pixel of a whole image. The …

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

G Verzellesi, D Saguatti, M Meneghini… - Journal of Applied …, 2013 - pubs.aip.org
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

[HTML][HTML] Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

D Feezell, S Nakamura - Comptes Rendus Physique, 2018 - Elsevier
The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked
a more than twenty-year period of intensive research to improve their efficiency. Solutions to …

Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics

C Zhao, TK Ng, RT ElAfandy, A Prabaswara… - Nano …, 2016 - ACS Publications
A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization

JI Shim, DS Shin - Nanophotonics, 2018 - degruyter.com
For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …

Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport

Q Lv, J Liu, C Mo, J Zhang, X Wu, Q Wu, F Jiang - Acs Photonics, 2018 - ACS Publications
The potential of multicolor semiconductor electroluminescence in solid-state lighting has
been extensively pursued due to the energy-saving and smart-lighting as compared to …

Current-and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes

CH Oh, JI Shim, DS Shin - Japanese Journal of Applied Physics, 2019 - iopscience.iop.org
We investigate the current-dependent and temperature-dependent efficiency droops (" J-
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Y He, J Yan, L Xu, B Zhang, Q Cheng, Y Cao… - Advanced …, 2021 - Wiley Online Library
Room‐temperature‐high‐efficiency light‐emitting diodes based on metal halide perovskite
FAPbI3 are shown to be able to work perfectly at low temperatures. A peak external quantum …