On-chip transformers are considered to be the primary components in many RF wireless
applications. This paper provides an in-depth review of on-chip transformers, starting with a …

In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …

This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX)
chipsets in a 0.13-SiGe BiCMOS process for high data-rate wireless communication. Both …

This article presents a 250-GHz SiGe amplifier composed of three differential cascode
stages in a 0.13-μm SiGe BiCMOS technology (f T/f MAX= 300/500 GHz). The Marchand …

This paper presents a balanced frequency doubler with 6.5-dBm peak output power at 204
GHz in 130-nm SiGe BiCMOS technology (f T/f max= 210/250 GHz). To convert the single …

This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

A 220-GHz power amplifier (PA) with high gain, high output power, and high efficiency for a
220-GHz transceiver system is presented in this letter. At terahertz (THz) and sub-terahertz …

This article presents a compact 150-GHz transmitter with 12-dBm Psat and 17-dB
conversion gain. This D-band transmitter is composed of a frequency doubler, a micromixer …

A new equivalent-circuit model and parameter-extraction method for six-port M: N on-chip
transformers and baluns are presented in this paper. All of the elements in the proposed …

This article presents a fully integrated IEEE 802.11 aj direct-conversion transceiver system in
a 120-nm SiGe: C BiCMOS technology. The system includes a transmitter, a receiver, and …