The development of infrared photodetectors is increasingly moving towards the realization of
large-scale, cost-effective integrated systems. Currently, silicon (Si), indium gallium arsenide …

The sidewall condition is a key factor determining the performance of micro‐light emitting
diodes (µLEDs). In this study, equilateral triangular III‐nitride blue µLEDs are prepared with …

Over the last decade, the first two-dimensional transition metal dichalcogenide, MoS 2, has
been extensively investigated for developing efficient photodetectors due to its tunable …

The issue of brightness in strong ambient light conditions is one of the critical obstacles
restricting the application of augmented reality (AR) and mixed reality (MR). Gallium nitride …

A defect-passivated photosensor based on cesium lead bromide (CsPbBr3) perovskite
quantum dots (QD) was fabricated using parylene films, and the photosensor was applied …

We investigate the current-dependent and temperature-dependent efficiency droops (" J-
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …

There are numerous applications for deep UV AlGaN Light-Emitting Diodes (LEDs) in virus
inactivation, air and water purification, sterilization, bioagent detection and UV polymer …

Perovskite light‐emitting diodes (PeLEDs) are promising candidates for lighting and display
applications. However, perovskites usually have a relatively high refractive index compared …

Blue InP quantum dot light-emitting diodes (QLEDs) are promising candidates for
environmental-friendly displays. To achieve efficient blue InP QLEDs through light …

The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron
blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically …