Fully depleted SOI (FDSOI) technology
K Cheng, A Khakifirooz - Science China Information Sciences, 2016 - Springer
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS
scaling to 22 nm node and beyond but also for improving the performances of legacy …
scaling to 22 nm node and beyond but also for improving the performances of legacy …
Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V †
N Sugii, Y Yamamoto, H Makiyama… - Journal of Low Power …, 2014 - mdpi.com
Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient
electronics. Although the operation at the minimum energy point (MEP) is effective for ULP …
electronics. Although the operation at the minimum energy point (MEP) is effective for ULP …
A Sub-μ W Reversed-Body-Bias 8-bit Processor on 65-nm Silicon-on-Thin-Box (SOTB) for IoT Applications
For most Internet-of-Things (IoT) applications, embedded processors typically execute
lightweight tasks such as sensing and communication. The typical IoT program senses some …
lightweight tasks such as sensing and communication. The typical IoT program senses some …
Characterizing alpha-and neutron-induced SEU and MCU on SOTB and bulk 0.4-V SRAMs
S Hirokawa, R Harada, M Hashimoto… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
We experimentally characterized and compared the soft error rates of 65-nm bulk and silicon
on thin buried oxide (SOTB) SRAMs by conducting accelerated alpha and neutron …
on thin buried oxide (SOTB) SRAMs by conducting accelerated alpha and neutron …
A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode
K Ishibashi, N Sugii, S Kamohara, K Usami… - IEICE Transactions …, 2015 - search.ieice.org
A 32bit CPU, which can operate more than 15 years with 220mAH Li battery, or eternally
operate with an energy harvester of in-door light is presented. The CPU was fabricated by …
operate with an energy harvester of in-door light is presented. The CPU was fabricated by …
An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET
H Okuhara, K Kitamori, Y Fujita… - 2015 IEEE/ACM …, 2015 - ieeexplore.ieee.org
Body bias control is an efficient means of balancing the trade-off between leakage power
and performance especially for chips with silicon on thin buried oxide (SOTB), a type of FD …
and performance especially for chips with silicon on thin buried oxide (SOTB), a type of FD …
RF characteristics of rectifier devices for ambient RF energy harvesting
K Ishibashi, J Ida, LT Nguyen… - … on Electronics and …, 2019 - ieeexplore.ieee.org
Numerous numbers of IoT sensors could be distributed to environments to persistently
monitor the environments and send the acquired data by wireless manner in the era of …
monitor the environments and send the acquired data by wireless manner in the era of …
RISC-V-Based System-on-Chips for IoT Applications
The rapidly growing IoT devices pose challenges to power requirements. Traditional power
sources, such as batteries, face many limitations, especially regarding durability. By …
sources, such as batteries, face many limitations, especially regarding durability. By …
[HTML][HTML] A 1.36 μW 312–315 MHz synchronized-OOK receiver for wireless sensor networks using 65 nm SOTB CMOS technology
The paper presents a receiver design operating at 312–315 MHz frequency band for
wireless sensor networks. The proposed architecture uses synchronized on–off-keying (S …
wireless sensor networks. The proposed architecture uses synchronized on–off-keying (S …
Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters
In this work, we demonstrate mechanically flexible extremely thin silicon on insulator
(ETSOI) ring oscillators with a stage delay of∼ 16 ps at a power supply voltage of 0.9 V …
(ETSOI) ring oscillators with a stage delay of∼ 16 ps at a power supply voltage of 0.9 V …