This paper describes the evolution of the SOI MOSFET from single-gate structures to
multigate (double-gate, trigate, Π-gate, Ω-gate and gate-all-around) structures. Increasing …

In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET
(DMSG) by solving the Poisson equation has been proposed and verified using ATLAS …

The classical MOSFET is reaching its scaling limits and “endof-roadmap” alternative devices
are being investigated. Amongst the different types of SOI devices proposed, one clearly …

In this work we discuss limitations of the split-CV method when it is used for extracting carrier
mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on …

General introduction of this Chapter shows the evolution of the SOI MOS transistor and
retraces the history of the multigate concept. The advantages of multigate FETs in terms of …

Based on 3D simulations, we report a performance assessment of triple-and double-gate
FinFETs for high performance (HP), low operating power (LOP) and low standby power …

This book presents the material necessary for understanding the physics, operation, design,
and performance of modern MOSFETs with nanometer dimensions. It offers a brief …

The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors
by low-temperature transport experiments. These three-dimensional nanoscale devices …

Due to the rapid growth in electronic industries, the revolution on integrated circuits still
plays a major role. Over the past few decades, research works on integrated circuits are …

The classical MOSFET is reaching its scaling limits and" end-of-roadmap" alternative
devices are being investigated. Amongst the different types of SOI devices proposed, one …