GaN nanostructures have been extensively studied due to their important properties and
applications in many fields. The recent synthesis and uses of these nanostructures have …

Gallium nitride (GaN) thin film was grown by Nd: YAG pulsed laser ablation with two laser
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …

We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in
liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid …

GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:
YAG laser at pulsed laser ablation energy of 1600 mj and laser wavelength of 1064 nm. The …

GaN is a promising third-generation semiconductor material for fabricating nanodevices with
nanoscale dimensions. In particular, thick-film sensors fabricated with GaN nanoparticles …

This study involves the synthesis of gallium nitride (GaN) nanoparticles (NPs) under different
low temperatures using a simple chemical method. The nanoparticles are spin coated on Si …

LaTiO 3 films were prepared at room temperature, 60, 140 and 220° C using a thermal vapor
deposition technique with an electronic beam gun to investigate the relationship between …

ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by
electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO …

Nanotechnology in Sudan: Current Status, Challenges and Prospects Page 1 Nanotechnology
in Sudan: Current Status, Challenges and Prospects UNESCO Report Dr. Mustafa Abbas …

We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in
liquid. This study applied six different energies for ablated GaN Nanoparticles in the liquid …