Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology
for obtaining high-efficient and compact power electronic systems. At the design stage of a …

Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …

Silicon carbide (SiC) power devices have the potential to operate at high temperatures
beyond the capabilities of silicon power devices. At increased temperatures, the temperature …

SiC metal-oxide-semiconductor field-effect transistor (MOSFET) has a fast switching speed
and high slew rate. However, its ultrashort switching time approximates the rise time and …

In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC
MOSFETs with a double and asymmetric trench structure are proposed under single-pulse …

Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon
carbide MOSFET power module. The approach is based on a full circuital representation of …

An improved SiC MOSFET model is proposed in this article, which predicts the dynamics
accurately in the wide operation range of the SiC mosfet. The temperature-sensitive effect …

The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe
operation of the power conversion systems, particularly under the extreme temperature …

Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …