Wafer-level heterogeneous integration for MOEMS, MEMS, and NEMS
Wafer-level heterogeneous integration technologies for microoptoelectromechanical
systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical …
systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical …
Influence of humidity on contact resistance in graphene devices
The electrical contact resistance at metal–graphene interfaces can significantly degrade the
properties of graphene devices and is currently hindering the full exploitation of graphene's …
properties of graphene devices and is currently hindering the full exploitation of graphene's …
Low-cost uncooled microbolometers for thermal imaging
Cost efficient integration technologies and materials for manufacturing of uncooled infrared
bolometer focal plane arrays (FPA) are presented. The technology platform enables …
bolometer focal plane arrays (FPA) are presented. The technology platform enables …
Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays
Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful
tool for non-contact measurement and imaging of temperature in many industrial, automotive …
tool for non-contact measurement and imaging of temperature in many industrial, automotive …
Ge/SiGe quantum well pin structures for uncooled infrared bolometers
FB Atar, A Yesilyurt, MC Onbasli… - IEEE electron device …, 2011 - ieeexplore.ieee.org
The temperature dependence of current is investigated experimentally for silicon–
germanium (Si-Ge) multi-quantum-well pin devices on Si substrates as uncooled bolometer …
germanium (Si-Ge) multi-quantum-well pin devices on Si substrates as uncooled bolometer …
Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays
P Ericsson, AC Fischer, F Forsberg… - Infrared Technology …, 2011 - spiedigitallibrary.org
Most of today's commercial solutions for un-cooled IR imaging sensors are based on
resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the …
resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the …
Epitaxial Growth and Characterization of Self-Doping Multi-Quantum Well Materials
B Jiang, T Dong, Y Su, Y He… - Journal of …, 2013 - ieeexplore.ieee.org
This paper presents self-doping Si 1-x Ge x/Si multiquantum wells (MQWs) with35 nm buffer
layers where self-doping occurs to allow free carriers in the quantum well. The film grown …
layers where self-doping occurs to allow free carriers in the quantum well. The film grown …
A comparative study of the bonding energy in adhesive wafer bonding
F Forsberg, F Saharil, T Haraldsson… - Journal of …, 2013 - iopscience.iop.org
Adhesion energies are determined for three different polymers currently used in adhesive
wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol …
wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol …
Batch transfer of radially expanded die arrays for heterogeneous integration using different wafer sizes
This paper reports on the realization of a novel method for batch transfer of multiple separate
dies from a smaller substrate onto a larger wafer substrate by using a standard matrix …
dies from a smaller substrate onto a larger wafer substrate by using a standard matrix …
Heterogeneous integration technology for combination of different wafer sizes using an expandable handle substrate
This paper reports on the realization of a novel method for batch transfer of multiple separate
dies from a smaller substrate onto a larger wafer substrate by using a standard matrix …
dies from a smaller substrate onto a larger wafer substrate by using a standard matrix …