600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates
M Alshahed, M Alomari, C Harendt… - 2016 46th European …, 2016 - ieeexplore.ieee.org
In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN
substrates over similarly processed devices on Sapphire and Silicon substrates, intended for …
substrates over similarly processed devices on Sapphire and Silicon substrates, intended for …
Characterization of Doped Gallium Nitride Substrates
JL Owsley III - 2012 - rave.ohiolink.edu
In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples
provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on …
provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on …