Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives

W Liu, Y Yu, M Peng, Z Zheng, P Jian, Y Wang, Y Zou… - InfoMat, 2023 - Wiley Online Library
In the last decade, two‐dimensional layered materials (2DLMs) have been drawing
extensive attentions due to their unique properties, such as absence of surface dangling …

Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors

DO Alshahrani, M Kesaria, EA Anyebe… - Advanced photonics …, 2022 - Wiley Online Library
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

Van der Waals two-color infrared photodetector

P Wu, L Ye, L Tong, P Wang, Y Wang… - Light: Science & …, 2022 - nature.com
With the increasing demand for multispectral information acquisition, infrared multispectral
imaging technology that is inexpensive and can be miniaturized and integrated into other …

Dual-band infrared imaging using stacked colloidal quantum dot photodiodes

X Tang, MM Ackerman, M Chen, P Guyot-Sionnest - Nature photonics, 2019 - nature.com
Infrared multispectral imaging is attracting great interest with the increasing demand for
sensitive, low-cost and scalable devices that can distinguish coincident spectral information …

[HTML][HTML] Mid-wavelength high operating temperature barrier infrared detector and focal plane array

DZ Ting, A Soibel, A Khoshakhlagh, SB Rafol… - Applied Physics …, 2018 - pubs.aip.org
We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II
superlattices for infrared detector applications and argue that the former is the most effective …

InAsSb-based infrared photodetectors: Thirty years later on

A Rogalski, P Martyniuk, M Kopytko, P Madejczyk… - Sensors, 2020 - mdpi.com
In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …

Recent progress of III–V quantum dot infrared photodetectors on silicon

A Ren, L Yuan, H Xu, J Wu, Z Wang - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …

Mercury telluride colloidal quantum-dot focal plane array with planar pn junctions enabled by in situ electric field–activated doping

T Qin, G Mu, P Zhao, Y Tan, Y Liu, S Zhang, Y Luo… - Science …, 2023 - science.org
Colloidal quantum dot (CQD)–based photodetectors are promising alternatives to bulk
semiconductor-based detectors to be monolithically integrated with complementary metal …

[HTML][HTML] Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density

A Soibel, DZ Ting, SB Rafol, AM Fisher, SA Keo… - Applied Physics …, 2019 - pubs.aip.org
There was a significant improvement in the performance of infrared nBn detectors utilizing
InAs/InAsSb absorbers culminating in the development of infrared focal plane arrays (FPAs) …

Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon

E Delli, V Letka, PD Hodgson, E Repiso… - Acs …, 2019 - ACS Publications
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation
ultracompact spectroscopic systems for applications in gas sensing, defense, and medical …