In situ modification of discoid α-Fe2O3 nanostructures with Bi2WO6 for high performance n-butanol sensor

Y Li, X Wang, G Sun, J Cao, Y Wang - Vacuum, 2023 - Elsevier
Intentionally constructing nn or pn heterojunctions in nanostructured metal oxide
semiconductor (MOS) has been verified to be one of efficient strategies to develop MOS …

influence of synthesis methods and performance of rare earth doped TiO2 photocatalysts in degrading dye effluents

Y Sari, PL Gareso, D Tahir - International Journal of Environmental …, 2024 - Springer
In the era of rapid industrial growth, waste treatment becomes a critical issue. In this regard,
titanium dioxide (TiO2) photocatalysts doped with rare earth elements (Ce, Eu, and Er) have …

A Review on High Temperature Stable Anatase TiO2 Photocatalysts

P Periyat, B Naufal, SG Ullattil - Materials Science Forum, 2016 - Trans Tech Publ
This review focuses on the recent developments of high temperature stable anatase TiO2
photocatalyst. Eventhough TiO2 exists in different forms anatase, rutile and brookite …

Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

Y An, L Dai, Y Wu, B Wu, Y Zhao, T Liu… - Journal of Advanced …, 2019 - World Scientific
In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-
Ga2O3 (100) and Al2O3 (0001) substrates using pulsed laser deposition (PLD). By …

High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition

Y Ma, B Feng, X Zhang, T Chen, W Tang, L Zhang… - Vacuum, 2021 - Elsevier
Abstract High-quality (100)-oriented β-Ga 2 O 3 films were successfully grown on (110) TiO
2 substrates by metalorganic chemical vapor deposition (MOCVD) for the first time. Crystal …

Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates

L Kong, J Ma, C Luan, W Mi, Y Lv - Thin Solid Films, 2012 - Elsevier
Gallium oxide (Ga2O3) films were deposited on MgO (100) substrates by metalorganic
vapor phase epitaxy. Structure analyses showed that the films deposited at 550–700° C …

Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

D Wang, L He, Y Le, X Feng, C Luan, H Xiao, J Ma - Ceramics International, 2020 - Elsevier
Abstract Gallium oxide (Ga 2 O 3) films have been deposited on SrTiO 3 (100) substrates by
using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition …

High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates

R Chen, C Zhao, C Luan, J Ma, H Xiao - Materials Science in …, 2023 - Elsevier
In this paper, β-Ga 2 O 3 films were grown on GaN (0001) substrates before and after
electrochemical etching via MOCVD. XRD results showed that the β-Ga 2 O 3 film was …

Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition

X Du, W Mi, C Luan, Z Li, C Xia, J Ma - Journal of Crystal Growth, 2014 - Elsevier
Abstract β-Ga 2 O 3 films have been homoepitaxially deposited on β-Ga 2 O 3 (1 0 0)
substrates by metal organic chemical vapor deposition (MOCVD) method. The influences of …

Properties of Ti-oxide thin films grown in reactive magnetron sputtering with self-heating target

R Graillot-Vuillecot, AL Thomann, T Lecas… - Vacuum, 2022 - Elsevier
Titanium dioxide thin films have been synthetized by magnetron sputtering in two
configurations: using a classical cooled target (cold configuration) or allowing the target …