The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic
thin films of Mn 5 Ge 3. We have separated the intrinsic and extrinsic contributions to the …

Two-dimensional condensed matter is realized in increasingly diverse forms that are
accessible to experiment and of potential technological value. The properties of these …

In the active search for potentially promising candidates for spintronic applications, we focus
on the intermetallic ferromagnetic Mn 5 Ge 3 compound and perform accurate first-principles …

Group-IV metal chalcogenides-based diluted magnetic semiconductor (DMS) thin films with
high-temperature ferromagnetism (FM) are desirable for semiconductor spintronic devices …

We present a comprehensive study of ferromagnetism and magnetotransport in Mn-doped
germanium, grown with molecular-beam epitaxy. Ferromagnetism in Mn x Ge 1− x (0< x< …

We have studied the magnetic and magnetotransport properties of Mn-doped Ge grown by
molecular-beam epitaxy. This group-IV dilute ferromagnetic semiconductor exhibits two …

We have characterized the structural and magnetic properties of low-temperature molecular-
beam epitaxy grown Ge: Mn by means of high-resolution transmission electron microscopy …

Epitaxial Mn5Ge3/Ge (111) heterostructures were grown by Solid Phase Epitaxy (SPE)
method, which consists of a room temperature Mn deposition followed by thermal annealing …

Germanium‐based alloys hold great promise for future spintronics applications, due to their
potential for integration with conventional Si‐based electronics. High‐quality single phase …

We report the effects of carbon incorporation on the structural and magnetic properties of
epitaxial Mn 5 Ge 3 C x films grown on Ge (111) by the solid phase epitaxy method. This …