The accomplishment of 1D semiconductor nanowires (SN) in the field of energy has
attracted intense interest in recent years due to their advantageous properties (eg, large …

Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

We study experimentally and theoretically the consumption of the apical gallium droplet that
mediates the self-catalyzed vapor–liquid–solid growth of GaP nanowires. Consumption is …

We analyse the electrical and optical properties of single GaN nanowire p–n junctions
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as doping …

Integrating self-catalyzed InAs nanowires on Si (111) is an important step toward building
vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) …

Geometrical design of the vertical arrays of III-V semiconductor nanowires (NWs) is a good
candidate for optoelectronic devices due to their ability to excite nanophotonic resonances …

We present the characterization of a pn-junction GaAs nanowire. For the characterization,
current–voltage, electron-beam-induced current, cathodoluminescence, and electron …

The electrical properties of passivated and non-passivated axial p–i–n junctions in GaAsP
nanowires are investigated using electron-beam induced current microscopy. Organized self …

A precise model for calculating the dependence of the composition of self-catalyzed Ga (As,
P) nanowires on the growth parameters without any fitting parameters is proposed. It is …

A tridimensional mathematical model to calculate the electron beam induced current (EBIC)
of an axial pn nanowire junction is proposed. The effect of the electron beam and junction …