NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …
observed and known to play an important role in device's lifetime. However, its …
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Silicon bandgap limits the reduction of operation voltage when downscaling device sizes.
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
Investigation of negative bias temperature instability effect in partially depleted SOI pMOSFET
C Peng, Z Lei, R Gao, Z Zhang, Y Chen, Y En… - IEEE …, 2020 - ieeexplore.ieee.org
The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O)
devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are …
devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are …
Influence of Buried Oxide Si+ Implantation on TID and NBTI Effects for PDSOI MOSFETs
C Peng, Y En, Z Lei, R Gao, Z Zhang… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
The total ionization dose (TID) effect and negative bias temperature instability (NBTI) effect
of 130-nm partially-depleted silicon-on-insulator (PDSOI) MOSFETs fabricated on hardened …
of 130-nm partially-depleted silicon-on-insulator (PDSOI) MOSFETs fabricated on hardened …
[图书][B] Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs
R Gao - 2018 - search.proquest.com
Abstract Bias Temperature Instability (BTI) is one of the most important reliability concerns
for Metal Oxide Semiconductor Field Effect Transistors (MOSFET), the basic unit in …
for Metal Oxide Semiconductor Field Effect Transistors (MOSFET), the basic unit in …
Research on negative bias temperature instability effects under the coupling of total ionizing dose irradiation for PDSOI MOSFETs
C Peng, R Gao, Z Lei, Z Zhang, Y Chen, YF En… - IEEE …, 2021 - ieeexplore.ieee.org
The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on
insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and …
insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and …
Voltage step stress: a technique for reducing test time of device ageing
Device ageing leads to circuit malfunction and must be controlled. During ageing, defects
build up slowly and the test is time consuming and costly. The typical ageing tests are …
build up slowly and the test is time consuming and costly. The typical ageing tests are …
Bias and Temperature Stress Effects in IGZO TFTs and the Application of Step-Stress Testing to Increase Reliability Test Throughput
Indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) are widely used in numerous
display applications and are emerging as a promising alternative for flexible IC production …
display applications and are emerging as a promising alternative for flexible IC production …
Overshoot Stress on Ultra-Thin HfO2 High- Layer and Its Impact on Lifetime Extraction
G Wan, T Duan, S Zhang, L Jiang… - IEEE Electron …, 2015 - ieeexplore.ieee.org
Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT~
0.8 nm) high-κ layer is investigated, which reveals that overshoot is of great importance to …
0.8 nm) high-κ layer is investigated, which reveals that overshoot is of great importance to …
[图书][B] Experimental Characterization of Random Telegraph Noise and Hot Carrier Aging of Nano-scale MOSFETs
AB Manut - 2020 - search.proquest.com
One of the emerging challenges in the scaling of MOSFETs is the reliability of ultra-thin gate
dielectrics. Various sources can cause device aging, such as hot carrier aging (HCA) …
dielectrics. Various sources can cause device aging, such as hot carrier aging (HCA) …