Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

The Ni-based self-aligned silicide process has attracted a rapidly growing interest for contact
metallization in Si technology, as the device dimensions are scaled down into the sub-100 …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Metal silicides continue to play an indispensable role during the remarkable development of
microelectronics. Along with several other technological innovations, the implementation of …

Continuous and uniform Ni (Si, Ge) layers are formed on polycrystalline Si and Si 0.42 Ge
0.58 substrate films at 500° C by rapid thermal processing. The germanosilicide is identified …

This paper reports ultralow contact resistivities (ρ c) achieved on highly doped p-SiGe with
two low-temperature contact formation methods. One method combines precontact …

The interfacial reactions and chemical phase formation between nickel and ultrahigh
vacuum chemical vapor deposited Si 0.75 Ge 0.25 alloy have been studied within the …

The formation of a ternary solid solution NiSi 1− x Ge x, instead of a mixture of NiSi and
NiGe, is found during solid-state interactions between Ni and various Si 1− x Ge x films …

As a structural layer for microelectromechanical systems, in situ doped polycrystalline silicon
germanium (poly-SiGe) can be deposited directly through openings of the uppermost …

This work determines the phase stabilities and point defect energetics of TiSi2 and TiGe2
allotropes using density functional theory. The primary focus is on the C49 and C54 …