NPDC structure double-channel N-polar E-mode GaN HEMTs: Innovations in enhancing RF and DC performance and mitigating trap effects
L Yang, H Sun, RP Lv, Z Liu, Y Zhang, L Yuan… - Microelectronics …, 2024 - Elsevier
High-electron-mobility transistors (HEMTs) based on gallium nitride (GaN) are favored for
their exceptional performance in high-power and high-frequency applications. However …
their exceptional performance in high-power and high-frequency applications. However …
Analysis of source, drain and gate field plated AlGaN/GaN based HEMT for high breakdown voltage
The rapidly-increasing operation frequency and power density in electrical power
conversion systems require the synthesis of power electronics devices that surmount …
conversion systems require the synthesis of power electronics devices that surmount …
Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction
L Yang, H Sun, R Lv, Z Liu, Y Zhang, P Wang… - IEEE …, 2023 - ieeexplore.ieee.org
This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a
connected dual-channel structure (CDC-HEMT). Specifically, the Al0. 05Ga0. 95N layer …
connected dual-channel structure (CDC-HEMT). Specifically, the Al0. 05Ga0. 95N layer …