Band parameters for nitrogen-containing semiconductors
I Vurgaftman, JR Meyer - Journal of applied physics, 2003 - pubs.aip.org
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Structure and electronic properties of InN and In-rich group III-nitride alloys
The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …
electrical methods is reviewed. Recent advances in thin film growth have produced single …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Complete composition tunability of InGaN nanowires using a combinatorial approach
The III nitrides have been intensely studied in recent years because of their huge potential
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …
Superior radiation resistance of alloys: Full-solar-spectrum photovoltaic material system
High-efficiency multijunction or tandem solar cells based on group III–V semiconductor
alloys are applied in a rapidly expanding range of space and terrestrial programs …
alloys are applied in a rapidly expanding range of space and terrestrial programs …
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
We have derived consistent sets of band parameters (band gaps, crystal field splittings,
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …
Temperature dependence of the fundamental band gap of InN
Ga-rich InGaN is one of the key materials for short wavelength light emitting devices and has
been extensively studied in the past 10 yr. 1 Much less is known about the In-rich side of this …
been extensively studied in the past 10 yr. 1 Much less is known about the In-rich side of this …
Intrinsic electron accumulation at clean InN surfaces
The electronic structure of clean InN (0001) surfaces has been investigated by high-
resolution electron-energy-loss spectroscopy of the conduction band electron plasmon …
resolution electron-energy-loss spectroscopy of the conduction band electron plasmon …
[图书][B] Dopants and defects in semiconductors
MD McCluskey, EE Haller - 2018 - books.google.com
Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …
specific examples of real-world defect physics... an easy reading, broad introductory …