Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes
(SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other …

The development of defect populations after proton irradiation of n-type 4 H-SiC and
subsequent annealing experiments is studied by means of deep level transient (DLTS) and …

Endotoxin adsorption has received extensive attention in the field of blood purification.
However, developing highly efficient endotoxin adsorbents with excellent hemocompatibility …

We present results from combined Laplace-Deep Level Transient Spectroscopy (Laplace-
DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC …

This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …

Particle irradiation is known to give rise to several majority carrier traps in the band gap of n-
type 4H-SiC, in the 0.4–1.6 eV energy range below the conduction band edge (EC). Among …

We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2
MeV He ion implantation. Deep levels of the M-center are investigated by means of junction …

Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …

We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-
level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced …