The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

The human brain can perform advanced computing tasks, such as learning, recognition, and
cognition, with extremely low power consumption and low frequency of neuronal spiking …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …

The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium
doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the …

The utilization of bipolar-type memristive devices for the realization of synaptic connectivity
in neural networks strongly depends on the ability of the devices for analog conductance …

We propose a stochastic model for a memristive system by generalizing known approaches
and experimental results. We validate our theoretical model by experiments carried out on a …

Redox‐based resistive random access memories (ReRAMs) are based on electrochemical
processes of oxidation and reduction within the devices. The selection of materials and …