Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Diamond is a promising material for future high power devices due to high breakdown field,
low dielectric constant and high carrier mobility, respectively. From one-dimensional device …

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is
demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is …

Large high-quality type IIa diamond crystals measuring up to 12 mm in diameter were
successfully synthesized by the temperature gradient method at high pressure and high …

The properties of phosphorus incorporation for n-type doping of diamond are discussed and
summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results …

We developed and investigated a set of packaged vertical diamond Schottky barrier diodes
(SBDs) with a large crystal area of up to 25 mm 2. All devices show forward current above 5 …

Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding
oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-μm thick …

Switch Mode Power Supply (SMPS) is now widely used for the control and conversion of
electric power from one watt to several megawatts. In this context, the synthesis and use of …

ZnGa 2 O 4 epilayers have been grown on sapphire using the metalorganic chemical vapor
deposition system. However, there is a trade-off between high conductivity and large defect …