Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays
Y Li, KW Ang - Advanced Intelligent Systems, 2021 - Wiley Online Library
Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …
overcome the intrinsic energy and speed issues of traditional von Neumann based …
Effect of the threshold kinetics on the filament relaxation behavior of Ag‐based diffusive memristors
Owing to their unique features such as thresholding and self‐relaxation behavior diffusive
memristors built from volatile electrochemical metallization (v‐ECM) devices are drawing …
memristors built from volatile electrochemical metallization (v‐ECM) devices are drawing …
Quantum conductance in vertical hexagonal boron nitride memristors with graphene-edge contacts
Two-dimensional materials (2DMs) have gained significant interest for resistive-switching
memory toward neuromorphic and in-memory computing (IMC). To achieve atomic-level …
memory toward neuromorphic and in-memory computing (IMC). To achieve atomic-level …
Te-based chalcogenide materials for selector applications
A Velea, K Opsomer, W Devulder, J Dumortier, J Fan… - Scientific reports, 2017 - nature.com
The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory
arrays, can be achieved with an appropriate selector for correct information storage and …
arrays, can be achieved with an appropriate selector for correct information storage and …
A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
The development of the resistive switching cross-point array as the next-generation platform
for high-density storage, in-memory computing and neuromorphic computing heavily relies …
for high-density storage, in-memory computing and neuromorphic computing heavily relies …
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Resistive RAM crossbar arrays offer an attractive solution to minimize off-chip data transfer
and parallelize on-chip computations for neural networks. Here, we report a …
and parallelize on-chip computations for neural networks. Here, we report a …
Active electrode redox reactions and device behavior in ECM type resistive switching memories
Electrochemical metallization cells rely on oxidation, reduction, and migration of metal
cations in nanoscale thin films. The cations are typically provided by the oxidation of the …
cations in nanoscale thin films. The cations are typically provided by the oxidation of the …
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …
advanced neuromorphic computing applications is a critical step in realizing electronic …