Electrical properties of Al/PCBM: ZnO/p-Si heterojunction for photodiode application

HH Gullu, DE Yildiz, A Kocyigit, M Yıldırım - Journal of Alloys and …, 2020 - Elsevier
In this paper, the electrical characteristics of spin-coated PCBM: ZnO interlayered Al/PCBM:
ZnO/Si diode are investigated under the aim of photodiode application. Under dark …

Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers

A Karabulut, DE Yıldız, DA Köse, M Yıldırım - Materials Science in …, 2022 - Elsevier
In this study, the effects of illumination on the electrical properties as well as the structural,
optical and photo-electrical properties of organic complex-based photodiodes synthesized …

Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode

HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2021 - Springer
In this study, electrical properties of the Al/TiO 2/p-Si diode structure with an atomic layer
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …

Thermal sensing capability of metal/composite-semiconductor framework device with the low barrier double Gaussian over wide temperature range

I Gumus, S Aydogan - Sensors and Actuators A: Physical, 2021 - Elsevier
In this work, wide temperature range junction sensor was fabricated and comprehensively
analyzed by grown of Graphene oxide (GO)-Fe 3 O 4 blend on a p-type Si substrate via spin …

Analysis of forward and reverse biased current–voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer

HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2019 - Springer
The dark current–voltage (IV IV) characteristics of Al/Al 2 O 3/n-Si Schottky diode are
investigated in a wide temperature range of 260–360 K. The diode shows four orders of …

A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

O Surucu, DE Yıldız, M Yıldırım - Applied Physics A, 2024 - Springer
This work extensively investigates the operation of an Al/Si3N4/p-Si Schottky-type
photodiode under dark and varying illumination intensities. The photodiode is fabricated by …

Semiconductor-based photodiodes with Ni and Zn-centered nicotinates interfacial layers

A Karabulut, M Unlu, M Yıldırım, DA Köse… - Journal of Materials …, 2024 - Springer
In order to fabricate the semiconductor-based photodetectors, Ni and Zn-centered nicotinate
complexes were synthesized chemically. The synthesized Ni and Zn-centered nicotinates …

Enhancing π-SnS thin films and fabrication of p-SnS/n-Si heterostructures through flow rate control in ultrasonic spray pyrolysis for improved photovoltaic performance

I Gunes - Applied Physics A, 2024 - Springer
This study presents findings related to the characterization of cubic SnS (π-SnS) thin films
and p-SnS/n-Si heterojunction structures produced simultaneously using the ultrasonic …

Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light

V Bilgin, E Sarica, B Demirselcuk, K Ertürk - Physica B: Condensed Matter, 2020 - Elsevier
In this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically
spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M …

Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer

PRS Reddy, V Janardhanam, KH Shim, SN Lee… - Thin Solid Films, 2020 - Elsevier
Abstract The Al/n-type Si Schottky barrier diodes (SBDs) were prepared with Au-Cu
phthalocyanine (Au-CuPc) interlayers with different Au and CuPc compositional ratios …