Temperature plays a decisive role in semiconductor device performance and reliability
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …

The continued exploration of the ferroelectric-based negative capacitance field effect
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …

Gate sidewall spacers, a pathway to the fringing fields, play a crucial role in the device
design. In this article, using well-calibrated TCAD models, we have explored the impact of a …

In this work, we explain the phenomena of ferroelectricity modulation in the ferroelectric (FE)
layer due to the residing dielectric (DE) phase. This work also demonstrates the impact of …

Achieving sub-60 mV/decade subthreshold swing in short channel Negative Capacitance
Field Effect Transistor (NCFET) devices requires the utilization of a thicker Ferroelectric (FE) …

This study investigates the effects of temperature on RF/Analog and linearity parameters
using a 3 nm technology node Step-Negative capacitance FinFET (SNC-FinFET) for the first …

With the superior analog/RF performance of planar device architectures such as fully
depleted silicon-on-insulator (FDSOI) MOSFETs, it becomes important to investigate the …

In this article, a systematic investigation of negative differential resistance (NDR) on a
negative capacitance Germanium source vertical TFET (NC-Ge-vTFET) is presented. The …

The article presents a comparative study on the performance of a ferroelectric quad-FinFET
(Fe-QFinFET) with and without the implementation of Si3N4 spacer for different temperature …

In this paper, a negative capacitance field effect transistor with thickness variable
ferroelectric layer (TVFL NCFET) based on the fully depleted silicon on insulator (FDSOI) is …