[图书][B] Laser annealing of semiconductors

J Poate - 2012 - books.google.com
Laser Annealing of Semiconductors deals with the materials science of surfaces that have
been subjected to ultrafast heating by intense laser or electron beams. This book is …

Transient annealing of semiconductors by laser, electron beam and radiant heating techniques

AG Cullis - Reports on Progress in Physics, 1985 - iopscience.iop.org
The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

Short time annealing

TO Sedgwick - Journal of the Electrochemical Society, 1983 - iopscience.iop.org
Short time annealing has recently become of interest in silicon processing as a technique to
activate ion implanted dopants, remove defects, and regrow amorphized silicon, with …

Rapid annealing-transformed, intense-red-emitting Eu-doped ZnGa2O4 nanoparticles with high colour purity, for very-high-resolution display applications

D Hebbar, KS Choudhari, N Pathak… - Materials Research …, 2019 - Elsevier
Rapid annealing (RA), an eco-friendly, soft processing technique was employed to
manipulate emission properties of nanocrystalline ZnGa 1.99 Eu 0.01 O 4. With RA …

Modification of silicon properties with lasers, electron beams, and incoherent light

GK Celler, HJ Leamy - Critical Reviews in Solid State and Material …, 1984 - Taylor & Francis
Lasers have long established a permanent position in manufacturing. 1–5 They are used to
cut hard and brittle materials, to weld metallic objects rapidly and efficiently, to harden locally …

Rapid thermal processing in semiconductor technology

MJ Hart, AGR Evans - Semiconductor Science and Technology, 1988 - iopscience.iop.org
The authors give a broad overview of some of the possible (and actual) applications of rapid
thermal processing (RTP) techniques. Pioneering work done in the field of RTP is described …

Transient annealing of arsenic‐implanted silicon using a graphite strip heater

BY Tsaur, JP Donnelly, JCC Fan, MW Geis - Applied Physics Letters, 1981 - pubs.aip.org
Transient annealing with a graphite strip heater has been used to accomplish solid‐phase
epitaxial recrystallization of amorphous layers produced in Si by implantation of 120‐keV …

Activation of low dose silicon implants in GaAs by multiply scanned electron beams

NJ Shah, H Ahmed, IR Sanders, JF Singleton - Electronics Letters, 1980 - IET
Low dose implants of Si+ into semi-insulating GaAs have been annealed with the multiply
scanned electron beam processing system. The activation of ions was about 55%, with a …

Characterisation of multiple-scan electron beam annealing method

RA McMahon, H Ahmed, RM Dobson, JD Speight - Electronics Letters, 1980 - IET
Beam power per unit area and exposure time are the predominant factors in defining implant
anneal conditions for the multiple scan electron beam annealing technique. A theoretical …

Electron beam system for rapid isothermal annealing of semiconductor materials and devices

RA McMahon, DG Hasko, H Ahmed - Review of scientific instruments, 1985 - pubs.aip.org
An isothermal processing system using a 2-kW electron beam is described. Processing of
areas up to 4 X 4 in. is achieved by rapidly scanning the beam in the multiple scan mode. An …