Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its
quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect …

In a classical light source, such as a laser, the photon number follows a Poissonian
distribution. For quantum information processing and metrology applications, a non-classical …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

We have measured the Auger recombination coefficients in defect-free InGaN nanowires
(NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma …

This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …

High quality multiple quantum well Al 0.35 Ga 0.65 N active layers with narrow wells
designed for ultraviolet (UV) light-emitting diodes using the phonon engineering approach …

The ternary semiconductor alloy Al 0.25 Ga 0.75 N has been analyzed by means of
correlated photoluminescence spectroscopy and atom probe tomography (APT). We find …

This paper reports a comprehensive analysis of the origin of the electroluminescence (EL)
peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral …

We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the
spontaneous formation of nanometric carrier localization centers. Accordingly, for single …

Aluminum gallium nitride (Al x Ga1–x N) alloy films and nanostructures have attracted
extensive research attention for ultraviolet (UV) and deep ultraviolet optoelectronic …