ZnO as a functional material, a review
MA Borysiewicz - Crystals, 2019 - mdpi.com
Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many
properties that make it widely studied in the material science, physics, chemistry …
properties that make it widely studied in the material science, physics, chemistry …
Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …
Influence of film thickness and annealing temperature on the structural and optical properties of ZnO thin films on Si (1 0 0) substrates grown by atomic layer …
JL Tian, HY Zhang, GG Wang, XZ Wang, R Sun… - Superlattices and …, 2015 - Elsevier
In this paper, ZnO thin films with different thicknesses grown on Si (1 0 0) substrates by
atomic layer deposition (ALD) method were annealed in nitrogen at the temperatures …
atomic layer deposition (ALD) method were annealed in nitrogen at the temperatures …
Vacancy cluster in ZnO films grown by pulsed laser deposition
Z Wang, C Luo, W Anwand, A Wagner, M Butterling… - Scientific reports, 2019 - nature.com
Abstract Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser
deposition (PLD) at the substrate temperature of 600° C. Positron annihilation spectroscopy …
deposition (PLD) at the substrate temperature of 600° C. Positron annihilation spectroscopy …
[HTML][HTML] Atomic layer deposition of environmentally benign SnTiOx as a potential ferroelectric material
Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials,
here the authors report the atomic layer deposition of tin titanate (SnTiO x) aiming to obtain …
here the authors report the atomic layer deposition of tin titanate (SnTiO x) aiming to obtain …
Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts
ZnO films (5 nm and 20 nm) have been grown on GaN single-crystal substrates by thermal
atomic layer deposition (ALD) and the electrical properties of n-GaN Schottky contacts …
atomic layer deposition (ALD) and the electrical properties of n-GaN Schottky contacts …
[HTML][HTML] Defectivity of Al: ZnO thin films with different crystalline order probed by Positron Annihilation Spectroscopy
Abstract Three Positron Annihilation Spectroscopy (PAS) techniques have been employed
to investigate the point defects of Al-doped Zinc Oxide (AZO) thin films grown by Radio …
to investigate the point defects of Al-doped Zinc Oxide (AZO) thin films grown by Radio …
Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
P Motamedi, K Cadien - RSC advances, 2015 - pubs.rsc.org
Gallium nitride films were deposited via plasma-enhanced atomic layer deposition (PEALD)
using triethylgallium and forming gas as precursors. An optimized process was developed …
using triethylgallium and forming gas as precursors. An optimized process was developed …
Current transport properties of Pt/n-GaN Schottky diodes with ZnO interlayers
In this work, atomic layer deposition (ALD) was used to grow 20-nm thick ZnO interlayers (IL)
on a GaN substrate at 150 and 200° C and the current transport mechanisms of vertical …
on a GaN substrate at 150 and 200° C and the current transport mechanisms of vertical …
Influence of the lattice mismatch on the atomic ordering of ZnO grown by atomic layer deposition onto single crystal surfaces with variable mismatch (InP, GaAs, GaN …
J Faugier-Tovar, F Lazar, C Marichy, C Brylinski - Condensed Matter, 2017 - mdpi.com
It has previously been reported that epitaxial growth of ZnO can be obtained at low
temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface …
temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface …