Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

TiO 2 films were deposited by ALD on Si and glass substrates. FTIR analysis reveals an
incomplete process for deposition temperatures below 160° C. The transition from the …

Atomic layer deposition (ALD) is now a widely implemented thin film growing method. It is
currently used in industrial fabrication processes of microelectronics and luminescent …

III–V compound semiconductors offer optoelectronic properties that are well suited for the
conversion of solar energy to chemical fuels. While such materials suffer from poor stability …

Amorphous titanium dioxide (TiO2) film coating by atomic layer deposition (ALD) is a
promising strategy to extend the photoelectrode lifetime to meet the industrial standard for …

Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …

Atomic layer deposition (ALD) is a surface synthesis technique that is characterized by self-
limiting reactions between gas-phase precursors and a solid substrate. Although ALD …

Deposition of high-k dielectric thin films is essential for manufacturing modern electronic
devices. Atomic layer deposition (ALD) is an attractive technology for depositing high-k …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

Transition metals (TMs) are being investigated as electrodes for pseudocapacitors, where
an oxide layer is necessary to allow for rapid redox reactions. In this work, we utilized an in …