[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs

HS Wasisto, JD Prades, J Gülink, A Waag - Applied Physics Reviews, 2019 - pubs.aip.org
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates

BK SaifAddin, AS Almogbel, CJ Zollner, F Wu… - ACS …, 2020 - ACS Publications
The disinfection industry would greatly benefit from efficient, robust, high-power deep-
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

BK SaifAddin, A Almogbel, CJ Zollner… - Semiconductor …, 2019 - iopscience.iop.org
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due
to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we …

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

J Slawinska, G Muziol, M Siekacz, H Turski… - Optics …, 2022 - opg.optica.org
We report on III-nitride-based micro-light-emitting diodes (µLEDs) operating at 450 nm
wavelength with diameters down to 2 µm. Devices with a standard LED structure followed by …

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

D Hwang, BP Yonkee, BS Addin, RM Farrell… - Optics express, 2016 - opg.optica.org
We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane
GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via …

High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

A David, CA Hurni, RI Aldaz, MJ Cich, B Ellis… - Applied Physics …, 2014 - pubs.aip.org
We report on the light extraction efficiency of III-Nitride violet light-emitting diodes with a
volumetric flip-chip architecture. We introduce an accurate optical model to account for light …

Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes

X Chen, C Ji, Y Xiang, X Kang, B Shen, T Yu - Optics Express, 2016 - opg.optica.org
Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in
AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A …

Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC

BK Saifaddin, M Iza, H Foronda, A Almogbel… - Optics …, 2019 - opg.optica.org
Discovering ways to increase the LED light extraction efficiency (LEE) should help create the
largest performance improvement in the power of UV AlGaN LEDs. Employing surface …

Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs

J Peretti, C Weisbuch, J Iveland… - … and Applications for …, 2014 - spiedigitallibrary.org
We discuss the unambiguous detection of Auger electrons by electron emission (EE)
spectroscopy from a cesiated InGaN/GaN light-emitting diode (LED) under electrical …

Transmission geometry laser lighting with a compact emitter

CE Reilly, G Lheureux, C Cozzan, E Zeitz… - … status solidi (a), 2020 - Wiley Online Library
Laser lighting systems can take many form factors for applications, such as spotlighting,
general illumination, or decorative lighting. The use of lasers in conjunction with phosphors …