[HTML][HTML] Diffusion of n-type dopants in germanium
A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …
material for nanoelectronic applications. Germanium has advantageous materials …
Oxygen defect processes in silicon and silicon germanium
A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …
Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt
K Sueoka, E Kamiyama, J Vanhellemont - Journal of Applied Physics, 2013 - pubs.aip.org
Density functional theory (DFT) calculations are performed to obtain the formation energies
of the vacancy V and the self-interstitial I at all sites within a sphere around the dopant atom …
of the vacancy V and the self-interstitial I at all sites within a sphere around the dopant atom …
Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
EN Sgourou, D Timerkaeva, CA Londos… - Journal of Applied …, 2013 - pubs.aip.org
We investigate the impact of isovalent (in particular lead (Pb)) doping on the production and
thermal stability of the vacancy-related (VO) and the interstitial-related (C i O i and C i C s) …
thermal stability of the vacancy-related (VO) and the interstitial-related (C i O i and C i C s) …
Effect of tin doping on oxygen-and carbon-related defects in Czochralski silicon
A Chroneos, CA Londos, EN Sgourou - Journal of Applied Physics, 2011 - pubs.aip.org
Experimental and theoretical techniques are used to investigate the impact of tin doping on
the formation and the thermal stability of oxygen-and carbon-related defects in electron …
the formation and the thermal stability of oxygen-and carbon-related defects in electron …
Evaluating cooling tube effects on defect formation and distribution in Czochralski crystal growth
YJ Huang, ARA Dezfoli - Journal of Materials Science: Materials in …, 2024 - Springer
The quality of silicon ingots is paramount in semiconductor manufacturing as defects
profoundly influence the crystal integrity and device performance. This study investigates the …
profoundly influence the crystal integrity and device performance. This study investigates the …
Primary radiation damage in silicon from the viewpoint of a machine learning interatomic potential
Characterization of the primary damage is the starting point in describing and predicting the
irradiation-induced damage in materials. So far, primary damage has been described by …
irradiation-induced damage in materials. So far, primary damage has been described by …
Seventy-five years since the point-contact transistor: Germanium revisited
EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …
achievements in human history with a profound impact on human civilization during the past …
Diffusion and dopant activation in germanium: Insights from recent experimental and theoretical results
Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …
applications. The understanding of diffusion at an atomic level is important for fundamental …
Vacancy-oxygen defects in silicon: the impact of isovalent doping
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …
The understanding of oxygen related defects at a fundamental level is essential to further …