[HTML][HTML] Diffusion of n-type dopants in germanium

A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt

K Sueoka, E Kamiyama, J Vanhellemont - Journal of Applied Physics, 2013 - pubs.aip.org
Density functional theory (DFT) calculations are performed to obtain the formation energies
of the vacancy V and the self-interstitial I at all sites within a sphere around the dopant atom …

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

EN Sgourou, D Timerkaeva, CA Londos… - Journal of Applied …, 2013 - pubs.aip.org
We investigate the impact of isovalent (in particular lead (Pb)) doping on the production and
thermal stability of the vacancy-related (VO) and the interstitial-related (C i O i and C i C s) …

Effect of tin doping on oxygen-and carbon-related defects in Czochralski silicon

A Chroneos, CA Londos, EN Sgourou - Journal of Applied Physics, 2011 - pubs.aip.org
Experimental and theoretical techniques are used to investigate the impact of tin doping on
the formation and the thermal stability of oxygen-and carbon-related defects in electron …

Evaluating cooling tube effects on defect formation and distribution in Czochralski crystal growth

YJ Huang, ARA Dezfoli - Journal of Materials Science: Materials in …, 2024 - Springer
The quality of silicon ingots is paramount in semiconductor manufacturing as defects
profoundly influence the crystal integrity and device performance. This study investigates the …

Primary radiation damage in silicon from the viewpoint of a machine learning interatomic potential

A Hamedani, J Byggmästar, F Djurabekova… - Physical Review …, 2021 - APS
Characterization of the primary damage is the starting point in describing and predicting the
irradiation-induced damage in materials. So far, primary damage has been described by …

Seventy-five years since the point-contact transistor: Germanium revisited

EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Diffusion and dopant activation in germanium: Insights from recent experimental and theoretical results

EN Sgourou, Y Panayiotatos, RV Vovk, N Kuganathan… - Applied Sciences, 2019 - mdpi.com
Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …

Vacancy-oxygen defects in silicon: the impact of isovalent doping

CA Londos, EN Sgourou, D Hall… - Journal of Materials …, 2014 - Springer
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …