Transistor structures formed with 2DEG at complex oxide interfaces
Embodiments disclosed herein include transistor devices with complex oxide interfaces and
methods of forming such devices. In an embodiment, the transistor device may comprise a …
methods of forming such devices. In an embodiment, the transistor device may comprise a …
Thin film transistor including high-dielectric insulating thin film and method of fabricating the same
JK Jeong, JW Lee - US Patent 10,797,149, 2020 - Google Patents
Disclosed are a thin film transistor including a substrate and a gate electrode, a gate
insulating film, a semiconductor layer, a source electrode, and a drain electrode formed on …
insulating film, a semiconductor layer, a source electrode, and a drain electrode formed on …