Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

Wide bandgap semiconductor technology is gaining widespread acceptance in the area of
high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a …

In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …

Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

Over the last decade, dc–dc power converters have attracted significant attention due to their
increased use in a number of applications from aerospace to renewable energy. The interest …